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TYPICAL PERFORMANCE CURVES (R)
APT75GN60B APT75GN60BG*
APT75GN60B(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
TO -2 47
G
C
E
* * * *
* 600V Field Stop
Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
8
All Ratings: TC = 25C unless otherwise specified.
APT75GN60B(G) UNIT Volts
600 30
@ TC = 25C
155 93 225 225A @ 600V 536 -55 to 175 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
600 5.0 1.05 5.8 1.45 1.87 25
2
6.5 1.85
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
A nA
9-2005 050-7619 Rev A
TBD 600 4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT75GN60B(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 75A TJ = 175C, R G = 4.3
7,
MIN
TYP
MAX
UNIT pF V nC
4500 370 150 9.5 485 30 270
VGE =
VGE = 15V
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V VCC = 600V, VGE = 15V, TJ = 125C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 75A
225 6 47 48 385 38 2500 3725 2140 47 48 430 55 2600 4525 2585
A
s
ns
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 75A
ns
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 1.0 7
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.28 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
9-2005 Rev A 050-7619
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package pin temperature to 100A.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 TJ = 25C TJ = 125C
V
GE
= 15V
250
APT75GN60B(G)
12V
13 & 15V
200
11V
150 10V
100
TJ = 175C
TJ = -55C
50
9V 8V
160 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0
7V
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 75A C T = 25C
J
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
TJ = -55C TJ = 25C TJ = 125C
VCE = 120V VCE = 300V VCE = 480V
80 60 40 20 0 0
8 6 4 2 0 0 100
TJ = 175C
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 150A VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
200 300 400 GATE CHARGE (nC)
500
FIGURE 4, Gate Charge 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 IC = 37.5A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0 2.5 2.0 IC = 75A 1.5 1.0 0.5 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 150A
IC = 75A
IC = 37.5A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
Lead Temperature Limited
(NORMALIZED)
050-7619
Rev A
9-2005
60 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 50 40 30 20 10 T = 25C, or =125C J
25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 5
VCE = 400V RG = 1.0 L = 100 H
600 VGE = 15V 500 400
VGE =15V,TJ=125C
APT75GN60B(G)
300
VGE =15V,TJ=25C
200 100 VCE = 400V RG = 1.0
25 45 65 85 105 125 145 165 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 5
0
0
L = 100H
200 180 160
RG = 1.0, L = 100H, VCE = 400V
90 80 70 tf, FALL TIME (ns) 60 50 40 30 20 10
RG = 1.0, L = 100H, VCE = 400V
tr, RISE TIME (ns)
140 120 100 80 60 40 20 0
TJ = 25 or 125C,VGE = 15V
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
0
16 EON2, TURN ON ENERGY LOSS (mJ) 14 12 10 8 6 4 2 0
EOFF, TURN OFF ENERGY LOSS (mJ)
V = 400V CE V = +15V GE R = 1.0
G
6 5 4 3 2
= 400V V CE = +15V V GE R = 1.0
G
TJ = 125C
TJ = 125C
TJ = 25C
1 0
TJ = 25C
25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
25 45 65 85 105 125 145 165 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (mJ)
40 35 30 25 20 15 10 5 0
0
SWITCHING ENERGY LOSSES (mJ)
= 400V V CE = +15V V GE T = 125C
J
16
Eon2,150A
14 12 10 8
= 400V V CE = +15V V GE R = 1.0
G
Eon2,150A
9-2005
Eon2,75A Eoff,150A Eoff,75A Eon2,37.5A Eoff,37.5A
6 Eon2,75A 4 2 0
0
Eoff,75A Eon2,37.5A Eoff,150A
Rev A
Eoff,37.5A
050-7619
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
7,000 IC, COLLECTOR CURRENT (A) Cies
250
APT75GN60B(G)
200
C, CAPACITANCE ( F)
P
1,000 500 Coes
150
100
50 Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0
0.30 0.25 0.20 0.15 0.10 0.05 0 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.5
Note:
PDM
0.3 SINGLE PULSE 0.1 0.05 10-5 10-4
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
100 FMAX, OPERATING FREQUENCY (kHz) 50
RC MODEL Junction temp. (C) 0.0998 Power (watts) 0.181 Case temperature. (C) 0.153 0.00438
10 5
T = 125C J T = 75C C D = 50 % V = 400V CE R = 1.0
G
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 50 70 90 110 130 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1 10
050-7619
Rev A
9-2005
APT75GN60B(G)
APT75DQ60
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr Collector Current 5% 5% Collector Voltage
90% 10%
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) tf 90% 10% Collector Voltage
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
9-2005
1.01 (.040) 1.40 (.055)
Gate Collector Emitter
Rev A
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-7619
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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